US Patent Issued to Intel on June 23 for "Transistor structures having a doping layer on transition metal dichalcogenide layers outside of the channel region" (Oregon Inventors)

Posted On: 2026-07-15

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,660, issued on June 23, was assigned to Intel Corp. (Santa Clara, Calif.). "Transistor structures having a doping layer on transition metal... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device having gate insulating layer in trench and on upper surface of substrate, channel layer on gate insulating layer, and spaced-apart source and drain electrodes on channel layer" (South Korean Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,661, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device having gate insulati... Read More

US Patent Issued to POWER MASTER SEMICONDUCTOR on June 23 for "Semiconductor device" (South Korean Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,662, issued on June 23, was assigned to POWER MASTER SEMICONDUCTOR Co. LTD. (Bucheon-si, South Korea). "Semiconductor device" was invented ... Read More

US Patent Issued to DB HITEK on June 23 for "Pillar structure and super junction semiconductor device including the same" (South Korean Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,663, issued on June 23, was assigned to DB HITEK Co. LTD. (Seoul, South Korea). "Pillar structure and super junction semiconductor device i... Read More

US Patent Issued to GlobalFoundries Singapore on June 23 for "Multiple-depth trench isolation for electrostatic discharge protection devices" (Singaporean, American Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,664, issued on June 23, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore). "Multiple-depth trench isolation for electrostatic... Read More

US Patent Issued to Tokyo Electron on June 23 for "Method of 3D epitaxial growth for high density 3D horizontal nanosheets" (Texas, Florida Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,665, issued on June 23, was assigned to Tokyo Electron Ltd. (Tokyo). "Method of 3D epitaxial growth for high density 3D horizontal nanoshee... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 23 for "Semiconductor device structure and method for forming the same" (Taiwanese Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,666, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure ... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Transistor contacts and methods of forming the same" (Taiwanese Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,667, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Transistor contacts and methods of ... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 23 for "Semiconductor devices with bonding layers" (Taiwanese Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,668, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor devices with bond... Read More

US Patent Issued to Soochow University on June 23 for "Field-effect transistor device with equivalent source and drain region optimization" (Chinese Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,669, issued on June 23, was assigned to Soochow University (Suzhou City, China). "Field-effect transistor device with equivalent source and... Read More

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US Patent Issued to Intel on June 23 for "Transistor structures having a doping layer on transition metal dichalcogenide layers outside of the channel region" (Oregon Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device having gate insulating layer in trench and on upper surface of substrate, channel layer on gate insulating layer, and spaced-apart source and drain electrodes on channel layer" (South Korean Inventors)

US Patent Issued to POWER MASTER SEMICONDUCTOR on June 23 for "Semiconductor device" (South Korean Inventors)

US Patent Issued to DB HITEK on June 23 for "Pillar structure and super junction semiconductor device including the same" (South Korean Inventors)

US Patent Issued to GlobalFoundries Singapore on June 23 for "Multiple-depth trench isolation for electrostatic discharge protection devices" (Singaporean, American Inventors)

US Patent Issued to Tokyo Electron on June 23 for "Method of 3D epitaxial growth for high density 3D horizontal nanosheets" (Texas, Florida Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 23 for "Semiconductor device structure and method for forming the same" (Taiwanese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Transistor contacts and methods of forming the same" (Taiwanese Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 23 for "Semiconductor devices with bonding layers" (Taiwanese Inventors)

US Patent Issued to Soochow University on June 23 for "Field-effect transistor device with equivalent source and drain region optimization" (Chinese Inventors)